In order to create a phase diagram of gallium-arsenide (GaAs) and gallium-timinide (GaSb), the scanning electron microscope will be used in the analysis of the nanoparticles as lens position, power of laser beam, the distribution of power to the samples, and the number of laser pulses is varied. SEM photography will be used to further study samples grown by ablation, and the dispersion of density of the material will be analyzed through a particle count created by the program Image. The attempted alloy of gallium-arsenide and gallium teminide would be a highly efficient semiconductor with potential applications in the creation of lasers, EM Radiation detectors, and fiber optics.